Characteristics of SiGe Oxidation and Ge Loss according to Ge Content

摘要

This paper investigates the oxidation behavior of Epitaxial Silicon Germanium ($Si_{1-x}Ge_{x}$) thin-film during a dry strip process. In this study hydrogen radicals generated through $H_{2}/N_{2}$ plasma, which is known to suppress surface oxidation, was examined. Oxidation behavior and Ge loss rate are compared according to Ge content.