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Giant Magnetoresistance in the Deformed Microcrystals of Indium Antimonide

机译:锑化铟变形微晶中的巨磁阻

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Giant magnetoresistance (up to 700%) of the deformed InSb whiskers with doping concentration 6×1016-2×l017 cm−3 was observed in magnetic fields with induction up to 10 T at temperature range 4.2–70 K. The effect was explained taking into account two-channel conductivity of the whiskers with core-shell structure. Besides, the obtained results were discussed in the framework of the quantum magnetoresistance theory. The obtained results allow to design the magnetic field sensor on the deformed InSb whiskers.
机译:掺杂浓度为6×10的变形InSb晶须的巨大磁阻(高达700%) 16 -2×l0 17 厘米 -3 在4.2–70 K的温度范围内,在高达10 T的感应磁场中观察到这种现象。考虑到具有核-壳结构的晶须的两通道电导率,解释了这一效应。此外,在量子磁阻理论的框架下讨论了获得的结果。获得的结果允许在变形的InSb晶须上设计磁场传感器。

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