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A comparison of two frequency synthesizer architectures in SiGe BiCMOS for FMCW radar

机译:用于FMCW雷达SiGe BICMOS中的两个频率合成器架构的比较

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We present a fractional-N phase-locked loop (PLL) with an option to operate either in single-loop or in dual-loop configuration. The PLL is composed of two chips: a voltage controlled oscillator (VCO) chip and a synthesizer chip that are integrated on one printed circuit board. In the synthesizer chip, a chirp generation circuit is included for frequency-modulated continuous-wave (FMCW) radar systems. The measurement results reveal that in the steady state the dual-loop operation is superior over single-loop operation due to its lower in-band phase noise. This makes it attractive for FMCW radar using slow frequency ramps. By contrast, in the case of fast frequency ramps the single-loop configuration is preferred due to its higher VCO gain resulting in a faster frequency settling. The circuits are fabricated in a 0.13 μm SiGe BiCMOS technology and are well suited for highly integrated FMCW radar systems at 80 GHz. They offer high flexibility in programming ramp type, ramp duration and modulation bandwidth.
机译:我们介绍了一个分数-N锁相环(PLL),可选择以单环或双循环配置操作。 PLL由两种芯片组成:压控振荡器(VCO)芯片和集成在一个印刷电路板上的合成器芯片。在合成器芯片中,包括用于频率调制的连续波(FMCW)雷达系统的啁啾生成电路。测量结果表明,由于其较低的带内噪声,在稳定状态下,双回路操作在单环操作上优异。这使得FMCW雷达使用慢速频率斜坡使其具有吸引力。相比之下,在快速频率斜坡的情况下,由于其较高的VCO增益导致频率稳定性更高,因此优选单环形配置。电路以0.13μmSiGeBICMOS技术制造,并且非常适用于80 GHz的高度集成的FMCW雷达系统。它们在编程斜坡型,斜坡持续时间和调制带宽方面具有高度的灵活性。

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