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A comparison of two frequency synthesizer architectures in SiGe BiCMOS for FMCW radar

机译:用于FMCW雷达的SiGe BiCMOS中两种频率合成器架构的比较

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We present a fractional-N phase-locked loop (PLL) with an option to operate either in single-loop or in dual-loop configuration. The PLL is composed of two chips: a voltage controlled oscillator (VCO) chip and a synthesizer chip that are integrated on one printed circuit board. In the synthesizer chip, a chirp generation circuit is included for frequency-modulated continuous-wave (FMCW) radar systems. The measurement results reveal that in the steady state the dual-loop operation is superior over single-loop operation due to its lower in-band phase noise. This makes it attractive for FMCW radar using slow frequency ramps. By contrast, in the case of fast frequency ramps the single-loop configuration is preferred due to its higher VCO gain resulting in a faster frequency settling. The circuits are fabricated in a 0.13 μm SiGe BiCMOS technology and are well suited for highly integrated FMCW radar systems at 80 GHz. They offer high flexibility in programming ramp type, ramp duration and modulation bandwidth.
机译:我们提出了分数N锁相环(PLL),并提供了以单环或双环配置运行的选项。 PLL由两块芯片组成:压控振荡器(VCO)芯片和合成器芯片,它们集成在一块印刷电路板上。在合成器芯片中,包括frequency调制电路,用于调频连续波(FMCW)雷达系统。测量结果表明,在稳态下,双环路操作优于单环路操作,因为其带内相位噪声较低。这使其对于使用慢频率斜坡的FMCW雷达具有吸引力。相比之下,在快速频率斜坡的情况下,由于其较高的VCO增益会导致更快的频率建立,因此首选单环路配置。这些电路采用0.13μmSiGe BiCMOS技术制造,非常适合80 GHz高度集成的FMCW雷达系统。它们在编程斜坡类型,斜坡持续时间和调制带宽方面提供了高度的灵活性。

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