SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

摘要

Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.