IGZO channel ferroelectric memory FET

摘要

We have proposed and demonstrated ferroelectric FET (FeFET) using ferroelectric-HfO2-(FE-HfO2) with IGZO channel for high density memory application in the form of 3D vertical stack structure. IGZO turns out to be a suitable capping material for FE-HfO2 capacitor with high reliability. IGZO FeFET shows memory characteristics with nearly ideal subthreshold characteristics owing to the defect-less interface between FE-HfO2 and IGZO. Channel mobility is also maintained throughout the device process. Opportunities and challenges are discussed.