Sensibilization of PbS Materials by Plasma Annealing

摘要

As-prepared PbS films independently on the method of preparation are all p-type semiconductors. The intrinsic p-type of PbS thin films without sensibilization is supposed to originate from the native defects i.e. structural imperfections and shallow accepter levels due to Pb vacancies. The large relativistic splitting in band structure of PbS materials makes them preferable for band gap engineering. In this work PbS thin films were prepared via direct plasma-chemical interaction of lead and sulfur vapors. Then, the as-prepared layers were annealed in argon-oxygen plasma. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The changes in electrical properties and structure were also studied.