A non-contact SiC Power MOSFETs health status monitoring method based on magnetic field detection technology

摘要

The long-term reliability of power modules is a key factor for most of the power electronics device. Silicon carbide (SiC) devices are entering the market gradually as the newgeneration power electronics semiconductors. Previous work of health condition monitoring is mainly for silicon devices and a few are for silicon carbide (SiC) modules among which there are still many problems such as isolation and accuracy. Magnetic field has been widely used in fault detection in many other areas as a good sensor which is contactless and sensitive. In this case, this paper proposes a non-contact SiC MOSFET health condition monitoring method based on magnetic field detection technology. The identification and measuring technique are tested on a platform showing that the method is promising for health condition monitoring of SiC MOSFET.