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Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam

机译:通过强大的离子束形成的消融等离子体沉积含硅涂层的特征

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This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO_2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C~+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm~2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.
机译:本文介绍了从消融等离子体沉积的含硅涂层沉积特征的研究,该等离子体由强大的离子束形成在对SiO_2的微色压制粉末的影响下形成。在双脉冲形成模式下基于TEMP-4M脉冲离子加速器的实验室设置进行了实验研究;第一个是负(300-500ns,100-150 kV),第二个是阳性(150ns,250-300kV)。梁组合物:C〜+离子(60-70%)和质子,靶的离子电流密度为25±5a / cm〜2。电子自磁绝缘二极管已经用于在TEMP-4M加速器中产生离子束。在IR光谱的帮助下分析了所得含硅膜的性质。通过扫描电子显微镜的方法研究了表面结构。

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