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A Memristor Model with Concise Window Function for Spiking Brain-Inspired Computation

机译:具有简明窗口函数的映射器模型,用于尖叫脑激发计算

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This paper proposes a concise window function to build a memristor model, simulating the widely-observed nonlinear dopant drift phenomenon of the memristor. Exploiting the non-linearity, the memristor model is applied to the in-situ neuromorphic solution for a cortex-inspired spiking neural network (SNN), spike-based Bayesian Confidence Propagation Neural Network (BCPNN). The improved memristor model utilizing the proposed window function is able to retain the boundary effect and resolve the boundary lock and inflexibility problem, while it is simple in form that can facilitate large-scale neuromorphic model simulation. Compared with the state-of-the-art general memristor model, the proposed memristor model can achieve a $5.8 imes$ reduction of simulation time at a competitive fitting level in cortex-comparable large-scale software simulation. The evaluation results show an explicit similarity between the non-linear dopant drift phenomenon of the memristor and the BCPNN learning rule, and the memristor model is able to emulate the key traces of BCPNN with a correlation coefficient over 0.99.
机译:本文提出了一个简洁的窗口功能来构建忆阻器模型,模拟了忆阻器的广泛观察的非线性掺杂剂漂移现象。利用非线性,忆阻器模型应用于基于皮质启动的尖刺神经网络(SNN)的原位神经晶体解决方案,峰值的贝叶斯置信信心传播神经网络(BCPNN)。利用所提出的窗口函数的改进的忆故函数模型能够保留边界效果并解决边界锁定和拐角问题,而这种形式简单,可以促进大规模的神经形态模型模拟。与最先进的通用Memristor模型相比,所提出的Memristor模型可以在Cortex可相当的大型软件模拟中实现竞争拟合水平的仿真时间5.8美元。评估结果示出了存储器和BCPNN学习规则的非线性掺杂剂漂移现象与BCPNN学习规则之间的显式相似性,并且存储器模型能够以超过0.99的相关系数模拟BCPNN的关键迹线。

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