Total Ionizing Dose Effects by alpha irradiation on circuit performance and SEU tolerance in thin BOX FDSOI process

摘要

Total ionizing dose (TID) effect is a phenomenon that threatens the reliability of transistors under high-radiation environments. TID is caused by radiation-induced trapped holes in oxide insulator. We evaluated the effects of TID on fully-depleted silicon on insulator (FDSOI) and bulk processes by measuring frequency of a ring oscillator (RO) and single event upset tolerance of flip flops (FFs). On the bulk process, TID induced Vth shift of nMOSFET, leads to increase of the RO frequency. On the FDSOI process, IR drop induced by large amount of leakage current flowing above buried oxide (BOX) layer decreases RO frequency. We also demonstrated that TID effects recovers by thermal annealing.