Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

摘要

Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and supply voltage are evaluated. An initial increase of SEU- and SET-induced soft error cross-section versus total dose is observed, followed by a decreasing trend at higher doses. The maximum increase of SEU- and SET-induced soft error cross-section occurs when the total-ionizing-dose is approximately 1.5 Mrad(SiO2) in the studied sequential circuit. The SET-induced soft error cross-section versus total dose increases at a faster speed than the SEU-induced soft error cross-section.