Reduction and Etching of Si-Rich SiOx Film by Atomic Hydrogen Annealing

摘要

To clarify the influence of atomic hydrogen on various materials is required for realization of a sustainable society using hydrogen energy. The influence of atomic hydrogen was investigated from the reaction of Si-rich SiOx film on a Si wafer using atomic hydrogen annealing (AHA). In AHA, the high-density atomic hydrogen is generated on a heated tungsten surface by catalytic cracking reaction. The Si-rich SiOx film was reduced by AHA. The Si-rich SiOx film was etched with an etching rate of 1.0 nm/min. It is considered that the chemical reactions of reduction and etching are originated from disordered bond network due to Si rich region. The Si-rich SiOx film is expected to be used as an atomic hydrogen sensor.