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Effect of Shock Pulse Variation on Surface Mount Electronics under High-G Shock

机译:高G冲击下冲击脉冲变化对表面贴装电子的影响

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In defense and aerospace applications, the electronic components may be exposed to very high-G forces in comparison with commercial electronic applications. Commercial Electronic parts are increasingly being used in high-G fuzing applications, hence survivability of electronic components has direct impact on the system reliability. In operating environments, high-G shock pulses can vary from few milliseconds to microseconds. The damage to the electronic components directly depends on the duration of exposure to the high-G forces (i.e. Shock pulse width). Under high-G shocks, the effect of varying shock pulse widths has not been studied and defined yet. Data on the effect of shock pulse will be useful in improving the design characteristics of the board and in choosing restraint mechanisms. The advantage of using restraint mechanisms along with the effects of high-G forces with varying shock pulses for fine pitch BGAs is a new study. In this study, the effect of varying shock pulses has been taken into account, while the prior works on high-G forces have not included it. All the test assemblies are restrained with potting which has been studied, under the effects of high-G forces with varying shock pulse durations. In addition to that, high voltage, multilayer ceramic 3640 capacitors are mounted and tested passively under high-G conditions along with the packages for reliability. In this paper, with respect to the end application in Defense and Aerospace systems, a circular test board has been used. All the potted printed circuit boards are tested along with high Voltage, multilayer ceramic 3640 capacitors have been mounted on to the test vehicles along with the packages to test reliability under high-G shock levels up to 25,000g.
机译:在国防和航空航天应用中,与商用电子应用相比,电子组件可能会承受很高的G力。商用电子零件越来越多地用于高G引信应用中,因此电子零件的生存能力直接影响系统的可靠性。在操作环境中,高G冲击脉冲的范围可能从几毫秒到几微秒不等。电子元件的损坏直接取决于承受高G力的持续时间(即冲击脉冲宽度)。在高G冲击下,尚未研究和定义变化的冲击脉冲宽度的影响。有关冲击脉冲影响的数据将有助于改善电路板的设计特性并选择约束机制。对于细间距BGA,使用约束机制以及具有变化冲击脉冲的高G力效应的优势是一项新的研究。在这项研究中,已考虑到变化的冲击脉冲的影响,而先前对高G力的研究并未包括在内。所有的测试组件都受到灌封的约束,在高G力的作用下,冲击波的持续时间不断变化,灌封已经被研究过。除此之外,高压,多层陶瓷3640电容器与封装一起在高G条件下进行无源安装和测试,以确保可靠性。在本文中,关于国防和航空航天系统的最终应用,已经使用了圆形测试板。所有封装的印刷电路板均经过测试,并与高压,多层陶瓷3640电容器以及封装一起安装在测试车辆上,以测试高达25,000g的高G冲击水平下的可靠性。

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