首页> 外文会议>IFIP WG 11.9 International Conference on Digital Forensics >DIGITAL FORENSIC ATOMIC FORCE MICROSCOPY OF SEMICONDUCTOR MEMORY ARRAYS
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DIGITAL FORENSIC ATOMIC FORCE MICROSCOPY OF SEMICONDUCTOR MEMORY ARRAYS

机译:半导体存储器阵列的数字法医原子力显微镜

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Atomic force microscopy is an analytical technique that provides very high spatial resolution with independent measurements of surface topography and electrical properties. This chapter assesses the potential for atomic force microscopy to read data stored as local charges in the cells of memory chips, with an emphasis on simple sample preparation ("delidding") and imaging of the topsides of chip structures, thereby avoiding complex and destructive techniques such as backside etching and polishing. Atomic force microscopy measurements of a vintage EPROM chip demonstrate that imaging is possible even when sample cleanliness, stability and topographical roughness are decidedly sub-optimal. As feature sizes slip below the resolution limits of optical microscopy, atomic force microscopy offers a promising route for functional characterization of semiconductor memory structures in RAM chips, microprocessors and cryptographic hardware.
机译:原子力显微镜是一种分析技术,可通过独立测量表面形貌和电特性来提供非常高的空间分辨率。本章评估原子力显微镜读取存储在存储芯片单元中作为局部电荷存储的数据的潜力,重点在于简单的样品制备(“去除”)和芯片结构顶部的成像,从而避免了复杂且破坏性的技术例如背面蚀刻和抛光。老式EPROM芯片的原子力显微镜测量结果表明,即使样品的清洁度,稳定性和表面粗糙度确定为次优条件,也可以进行成像。随着特征尺寸下降到光学显微镜的分辨率极限以下,原子力显微镜为RAM芯片,微处理器和密码硬件中的半导体存储结构的功能表征提供了一条有希望的途径。

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