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Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy

机译:利用原子力显微镜对铁电半导体中记录的微域和纳米域阵列进行建模

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摘要

The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with experimentally observed threshold nanodomains recording in Pb(Zr,Ti)O₃ and LiTaO₃ thin films. The realistic dependence of equilibrium nanodomain radius over applied voltage in BaTiO₃ LiNbO₃ ferroelectric-semiconductors, LiTaO₃ and Pb(Zr,Ti)O₃ thin films have been calculated. These results will help researchers both to achieve the reliable understanding of physical process taking place during nanoscale polarization reversal in the ferroelectric-semiconducting media and to determine the necessary conditions in order to record stable nanodomains with optimum lateral sizes and configuration to increase recording density and create various profiled microstructures.
机译:提出了铁电半导体中允许半导体特性,屏蔽和尺寸效应的纳米域定制的热力学理论。所获得的分析结果证明,畴外观类似于一阶相变,并且完全与实验观察到的在Pb(Zr,Ti)O₃和LiTaO₃薄膜中记录的阈值纳米畴一致。计算了BaTiO₃LiNbO₃铁电半导体,LiTaO₃和Pb(Zr,Ti)O₃薄膜中平衡纳米畴半径对施加电压的实际依赖性。这些结果将有助于研究人员对铁电半导体介质中纳米级极化反转过程中发生的物理过程有一个可靠的了解,并确定必要的条件以记录具有最佳横向尺寸和配置的稳定纳米域,以增加记录密度并创建各种异型的微结构。

著录项

  • 作者

    Morozovska A.N.;

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  • 年度 2006
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  • 原文格式 PDF
  • 正文语种 en
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