Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform

机译：在GeSnOI平台上实现GeSn光电二极管和FinFET的单片光电集成

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We demonstrated a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength range and beyond. Both GeSn photo detector and p-channel fin field-effect transistor were realized using this novel architecture.

机译：我们演示了用于单片光电集成的GeSn-on-insulator平台，适用于2μm波长范围及更高的波长范围。 GeSn光电探测器和p沟道鳍式场效应晶体管都是使用这种新颖的架构实现的。

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《International Conference on Group IV Photonics》|2019年|1-2|共2页
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Xiao Gong; Yi-Chiau Huang; Dian Lei; Saeid Masudy-Panah; Shengqiang Xu; Yee-Chia Yeo;
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关键词
Silicon; Photodiodes; Germanium; Detectors; Photonics; FinFETs;

机译：硅;光电二极管;锗;检测器;光子学; FinFET;

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专利

1. Monolithic Integration of Ⅲ-Ⅴ Active Devices into Silicon Platform for Optoelectronic Integrated Circuits [J] . Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA IEICE Transactions on Electronics . 2009,第1期

机译：Ⅲ-Ⅴ有源器件与光电子集成电路硅平台的单片集成
2. Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits [J] . Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA IEICE Transactions on Electronics . 2008,第2期

机译：将III-V有源器件单片集成到光电集成电路的硅平台中
3. Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices [J] . Carl L. Dohrman, Kamesh Chilukuri, David M. Isaacson, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2006,第3期

机译：在晶格工程衬底（SOLES）上制造硅，作为CMOS和光电器件单片集成的平台
4. Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform [C] . Xiao Gong, Yi-Chiau Huang, Dian Lei, International Conference on Group IV Photonics . 2019

机译：朝着Gesno平台Gesn光电二极管和FinFET的单片光电集成
5. Integrable Quasi-vertical Gallium Nitride Power UMOSFETs and Their Application to Monolithic Optoelectronic Integration [D] . Guo, Zhibo. 2019

机译：可积准垂直氮化镓功率UMOSFET及其在单片光电集成中的应用
6. High-quality GeSn Layer with Sn Composition up to 7 Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application [O] . Jiayin Yang, Huiyong Hu, Yuanhao Miao, 2019

机译：低温磁控溅射法生长的Sn含量高达7％的高质量GeSn层
7. Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode [O] . Bar-Chaim N., Lau K. Y., Ury I., 1984

机译：GaAlAs激光器，场效应晶体管和光电二极管的单片光电集成

Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform

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