Direct insight to SRAM array devices in advanced FinFET nodes by large scale ultra-fast in-situ characterization

摘要

This work reports the application of an ultra-fast in-situ characterization capability in SRAM array in advanced nodes. The methodology was tested in fully functional SRAM arrays in 14 nm and 7 nm FinFET nodes, allowing assessment of individual devices in the array and obtaining high sigma statistics. The technique benefits SRAM optimization, identification of yield detractors and reliability learning.