Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

摘要

The modeling of total-ionization-dose (TID)-induced spatial equivalent noise charge (ENC) of a CMOS APS is firstly given. A γ-ray irradiation experiment using ⁶⁰Co source is then performed to verify the models. The maximum error is less than 10% when the total dose is less than 60 krad (Si).