Total Ionizing Dose and Radiation Particle Strike Analysis of Nanoscale FinFET Devices and Circuits

摘要

The proposed work investigates the operational robustness and design reliability of 2D and 3D structures of the designed nano-scale devices and circuits, when irradiated by high-energy particles. The TID analysis are performed on 22nm FinFET devices, which is generated by using GDS2MESH tool. The paper presents a methodology for particle strike simulation to understand the ionization charge distribution and identify the vulnerable nodes in the 3D structure of a 22nm FinFET SRAM circuit by varying the Linear Energy Transfer (LET) values from 10MeV to 200Mev. This study is useful in validating the physical structure of a circuit in mitigating the effects of particle strike. In case of memory cell the vulnerable nodes are identified and guarded to isolate the charge distribution due to ionization.