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Characterization by GISAXS and Electrochemical Impedance Spectroscopy of porous oxide films

机译:GISAXS表征和多孔氧化物膜的电化学阻抗谱

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Porous oxide films were deposited by reactive sputtering. Some films received UV cures and/or a Si cap. The FTIR analyses show that the deposited films were very hydrophilic. Standard ellipsometric porosimetry was not able to determine porosity nor pore size. With GISAXS, the porosity of different films was determined (approximately 13%) and the pore format (mostly spherical pores with a radius of approximately 5 nm). Electrochemical Impedance Spectroscopy completed the pore analysis, indicating mostly open porosity. These techniques were sufficiently sensitive to show that the Si cap closed the pores somewhat while the UV cure increased the porosity.
机译:通过反应溅射沉积多孔氧化膜。一些膜已接受紫外线固化和/或硅封盖处理。 FTIR分析表明,沉积的膜是非常亲水的。标准椭圆偏振孔隙率法不能确定孔隙率或孔径。使用GISAXS,可以确定不同薄膜的孔隙率(大约13%)和孔的形式(主要是半径约为5 nm的球形孔)。电化学阻抗谱仪完成了孔分析,表明大部分为孔隙。这些技术足够灵敏,可以显示出Si帽在一定程度上封闭了孔,而UV固化则增加了孔隙率。

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