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Research on Fabrication of Resist Mold patterns for Electroplating

机译:电镀抗蚀剂模具图案的制造研究

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Printing of thick resist patterns with a high aspect ratio and vertical side walls was investigated. Such resist patterns are required for using as molds of electroplating, and patterning feasibility in a small field of 2 mm square was verified in the past researches. However, it is necessary to print patterns homogeneously in an exposure field with a practical size of larger than 10 mm square, for example. As profiles of resist patterns for the use of electroplating molds, rectangular cross-sections are preferable. For this reason, patterns were printed in the negative resist SU-8 with a thickness of 50 μm using an exposure system with a field size of 15 mm square. Before using the thick SU-8, the best focus position of the exposure system was investigated. To find out the best focus position, line and space (L&S) patterns were printed using a positive resist OFPR-800 with a thickness of approximately 1 μm. The focus position where patterns were most clearly formed on the wafer was decided to be the focus origin, and defocuses were controlled by moving wafers downward. Next, 50-μm L&S patterns were printed in 50-μm thick SU-8. As a result, L&S patterns with rectangular cross sections and a height of 40 μm were obtained when the defocus and the exposure time were set at 2000 μm and for 70 seconds, respectively. It was demonstrated that patterns with rectangular cross sections were printed in 3×5 mm~2 exposure fields.
机译:研究了具有高纵横比和垂直侧壁的厚抗蚀剂图案。这种抗蚀剂如电镀的模具所必需,并且在过去的研究中验证了2mm平方的小领域的图案化可行性。然而,例如,有必要在具有大于10mm平方的实际尺寸的曝光场中均匀地打印图案。作为用于使用电镀模具的抗蚀剂图案的轮廓,优选矩形横截面。因此,使用曝光系统,厚度为50μm的负抗蚀剂SU-8在负抗蚀剂SU-8中印刷图案。在使用厚SU-8之前,研究了暴露系统的最佳聚焦位置。要找出最佳焦点位置,使用厚度为约1μm的正抗抗抗抗抗抗抗抗抗抗焦点,印刷线和空间(L&S)图案。在晶片上最清晰地形成图案的焦点位置决定是焦点原点,并且通过向下移动晶片来控制散焦。接下来,在50μm厚的SU-8中印刷50μm的L&S图案。结果,当散焦和曝光时间分别设定为2000μm和70秒时,获得具有矩形横截面的L&S图案和40μm的高度。据证明,用矩形横截面的图案印在3×5mm〜2曝光场中。

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