Insulator Thickness Scaling: I-V Characteristics of 1D Nanowire MOSFETs and TFETs

摘要

This work provides a comparison of the changes in performance of a gate-all-around GAA carbon based tunnel field effect transistor p-i-n TFET and metal-oxide-semiconductor field effect transistor n-i-n MOSFET with respect to insulator thickness$pmb{t_{ox}}$values. The performance variations are prominent in the p-i-n TFET than n-i-n MOSFET structure;$pmb{g_{d}}$and$pmb{g_{m}}$are significantly degraded with$pmb{t_{ox}}$. The results are considered based on current spectrum on energy band diagram of the device in detail. Due to 1D quantum transport characteristics of CNTs the results could be applicable to any device with the same structure including 1D nanowire FET.