Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS

机译：Si（100）中的通道MeV B，P和As轮廓：蒙特卡洛模型和SIMS

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Details of experimental (SIMS) channeled profiles in Si(100) for MeV dopants (B, P, and As) are compared with Monte-Carlo calculations (IMSIL and SRIM) for crystalline and amorphous Si in an ion energy range from 800 keV to 3.1 MeV. Effects of small angle off-axis ion incidence, implantation at elevated wafer temperatures and beam angle divergence are studied in some detail.

机译：将Si（100）中MeV掺杂物（B，P和As）的实验（SIMS）沟道分布图的详细信息与离子能量范围为keke到800 keV的晶体硅和非晶硅的蒙特卡洛计算（IMSIL和SRIM）进行了比较。 3.1 MeV。研究了小角度离轴离子入射，晶圆温度升高时的注入和束角发散的影响。

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《International Conference on Ion Implantation Technology》|2018年|251-254|共4页
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Michael Current; Yoji Kawasaki; Gerhard Hobler; Michiro Sugitani;
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Ions; Silicon; Histograms; Monte Carlo methods; Implants; Semiconductor process modeling; Arsenic;

机译：离子;硅;直方图; Monte Carlo方法;放大器;半导体工艺建模;砷;

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2. Microdosimetric spectra simulated with MCNP6.1 with INCL4/ABLA model It for kerma and mean quality factor assessment, for neutrons between 100 keV to 19 MeV [J] . Antoni Rodolphe, Bourgois Laurent Radiation measurements . 2019,第期

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3. The (Li-6,Li-6*[3.56 MeV]) reaction at 100 MeV/u as a probe of Gamow-Teller transition strengths in the inelastic scattering channel [J] . Sullivan C., Zegers R. G. T., Noji S., Physical review, C . 2018,第1期

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4. Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS [C] . Michael Current, Yoji Kawasaki, Gerhard Hobler, International Conference on Ion Implantation Technology . 2018

机译：在SI（100）中引导了MEV B，P和作为配置文件：Monte-Carlo模型和SIMS
5. Monte-Carlo modeling of turbulent dispersion of small particles in channels. [D] . Wu, Xuemei. 2001

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Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS

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