Sb Implantation at High Dose and Medium Energy in SAion

机译：中毒高剂量和中等能量的锑注入

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摘要

In the SAion, a scanned beam system, Sb implantation at high dose and medium energy was evaluated, and the SAion demonstrated standard process characteristics under the production-worthy beam current.

机译：在SAion中，对扫描束系统，高剂量和中等能量的Sb注入进行了评估，并且SAion在有价值的束流下显示出标准的工艺特性。

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《International Conference on Ion Implantation Technology》|2018年|78-81|共4页
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作者
Yoji Kawasaki; Hiroshi Kawaguchi; Takanori Yagita; Noriyuki Suetsugu; Mitsuaki Kabasawa;
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关键词
Ions; Ion beams; Silicon; Industries; Ion implantation; Implants; Standards;

机译：离子;离子束;硅;工业;离子注入;放大器;标准品;

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Sb Implantation at High Dose and Medium Energy in SAion

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