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Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD

机译:基于PA-MBE和MOCVD生长的压电GaN纳米线的纳米发电机

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In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.
机译:在这项工作中,我们基于GaN纳米线(NW)阵列来制造和表征压电发生器。我们将通过等离子体辅助分子束外延(PA-MBE)或金属有机化学气相沉积(MOCVD)技术生长的GaN NW集成到聚合物基体中,以探索刚性和柔性器件的压电生成。两种类型的设备都表现出对外力和机械坚固性的高度敏感性。这些设备具有增强的机电转换效率,非常适合用于能量收集和力感测应用。

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