首页> 外文会议>IEEE International Conference on Nanotechnology >Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD
【24h】

Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD

机译:基于PA-MBE和MOCVD生长压电GaN纳米线的纳米液

获取原文

摘要

In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.
机译:在这项工作中,我们制造和表征基于GaN纳米线(NW)阵列的压源器。通过等离子体辅助分子束外延(PA-MBE)或金属有机化学气相沉积(MOCVD)技术将GaN NW集成为聚合物基质以探索刚性和柔性器件的压制。两种类型的设备对外力和机械稳健性显示出高的灵敏度。通过增强的技工 - 电转换效率,这些装置是能量收集和力传感应用的良好候选。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号