Through glass via technology for ultra-high Q factor inductors

摘要

Increasing demand for more advanced electronic products has driven semiconductor industry to develop more innovative and emerging advanced packaging technologies.Integrated Passive Devices have been proved to be an effecitve solution in fabricating products with better performance. In order to form higher Q factor inductors, the 3D integration inductors are designed and fabricated based on through glass via (TGV) method. Effect of substrate material and structure of 3D integration inductors was investigated by the simulation of HFSS and the test result. The results show that the ultra-high Q factor 3D integration inductors can be achieved by choosing glass substrate as long as selecting through glass via method. 3D integration inductors were achieved by reducing losses caused by MOS parasitic capacitor in the 3D integration inductors.