Novel photodetector based on FD-SOI substrate with interface coupling effect

摘要

We have proposed and demonstrated experimentally a novel semiconductor photodetector based on fully depleted silicon-on-insulator (FD-SOI) substrate. The device utilizes the interface coupling effect uniquely found in FD-SOI MOSFET, in which the photo-generated electrons accumulate at the top interface modulate the hole current at the bottom interface. The responsivity of this device reaches more than 1×10⁴A/W and, unlike other photodetectors based on SOI substrate, increases as the top silicon layer thickness reduces.