首页> 外文会议>IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems >Dual-Side Heat Removal by Silicon Cold Plate and Interposer With Embedded Fluid Channels
【24h】

Dual-Side Heat Removal by Silicon Cold Plate and Interposer With Embedded Fluid Channels

机译:带有嵌入式流体通道的硅冷板和中介层进行双面散热

获取原文

摘要

Heat dissipation of integrated circuits is established through the die back-side. In this study, we demonstrate dual-side heat removal from the chip front- and back-side. The key enabling element is a silicon interposer with embedded micro-channels between the through-silicon vias (TSV, array). The coolant is introduced into the module through a manifold and is distributed to the back-side cold plate and in parallel to the fluid cavity in the interposer. A thermal analysis on the stack topology options for a three-tier chip stack (GPU, CPU and cache) with an accumulated power dissipation of 672W is provided. The dual-side cooling approach allows the placement of the CPU as the bottom most die, mitigating thousands of power TSVs in the chip stack. An implementation of the convective interposer is presented with a hybrid pitch of 175 μm by 225 μm. The interposer is built from two interposer shells which are back-to-back bonded to yield a microchannel cross-section with a height of 250 μm and a width of 150 μm. Water is considered as the coolant. This requires sealing features at three levels of scale: within the interposer, between the interposer and the back-side cold-plate, and towards the manifold. The silicon cold-plate, chip-stack and interposer are assembled on an organic substrate. A two-fold improvement in thermal performance could be experimentally validated by the dual-side cooling solution compared to the back-side topology, enabling the integration of high-performance chip stacks.
机译:集成电路的散热是通过管芯的背面建立的。在这项研究中,我们演示了从芯片正面和背面去除双面热量的方法。关键使能元件是硅中介层,其在硅通孔(TSV,阵列)之间具有嵌入​​式微通道。冷却剂通过歧管引入模块,并分配到背面冷板,并平行于中介层中的流体腔。提供了对三层芯片堆栈(GPU,CPU和缓存)的堆栈拓扑选项的热分析,其累积功耗为672W。双面冷却方法允许将CPU放置在最底部的芯片上,从而减轻了芯片堆栈中成千上万的功率TSV。对流中介层的实现方式为175μmx 225μm的混合节距。中介层由两个中介层壳构建而成,两个中介层壳背对背结合在一起,以产生高度为250μm,宽度为150μm的微通道横截面。水被认为是冷却剂。这就需要三个等级的密封特征:插入件内,插入件和背面冷板之间以及朝向歧管。硅冷板,芯片叠层和中介层均组装在有机基板上。与背面拓扑相比,双面冷却解决方案可以通过实验验证热性能提高了两倍,从而实现了高性能芯片堆栈的集成。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号