Simulation of a Novel Integrated 4H-SiC Temperature Sensor

摘要

This paper presents a novel integrated Schottky barrier diode temperature sensor in a 4H-SiC power MOSFET. Dual electrical isolation and additional current path are applied to this temperature sensor, allowing the sensor to work properly in any operating state of power MOSFET. Due to the sufficient electrical isolation, the crosstalk between sensor and power MOSFET is almost eliminated. Furthermore, high sensitivity S=1.21mV/K is observed for a constant bias current of I_d=1mA. The temperature sensor exhibits a good degree of linearity with a root mean square error R²=0.99996.