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On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn?

机译:关于高κ门堆栈的低频噪声:我们学到了什么?

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摘要

A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-κ/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps.
机译:本文对使用高κ/金属栅叠层制造的晶体管的低频(LF)噪声行为进行了综述。结果表明,功函数调整金属氧化物覆盖层的实施对栅极叠层质量,尤其是对氧化物陷阱的有效密度具有显着影响。

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