Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications

摘要

Single-crystalline MoSe₂ and MoTe₂ platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe₂ shows p-type, whereas MoSe₂ with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe₂ and MoTe₂ FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe₂ and MoTe₂ layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance.