Application of Mono Layered Graphene Field Effect Transistors for Gamma Radiation Detection

摘要

In this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by ⁶⁰Co gamma radiation source for 10 kGy and 20 kGy gamma dose. The Electrical measurements and Raman spectroscopy showed that gamma radiation induced p-doping in graphene. Large positive shifts in Dirac point and significant degradation in electron mobility were observed post-gamma irradiation. Thus modulation in transport properties of GFETs was utilized here to measure the absorbed gamma radiations. We propose, a GFET based radiation detector with high sensitivity of + 113 V for 20 kGy gamma dose operating in ambient condition.