Simulation study of high power microwave damage effect on GaAs HEMT

摘要

This paper presents the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) from drain electrode. A two-dimensional electro-thermal model of the typical HEMT is established by simulation software ISE-TCAD. Mobility degradation in high electric field and avalanche generate effect are considered, analyze the distributions and variations of the electric field, the current density and the temperature. The simulation results suggest that intrinsic excitation, avalanche breakdown, thermal breakdown all contribute to damage process. Heat accumulation occurs during the negative half cycle and below the gate near the drain side is most susceptible to burn-out.