Optimisation of Pattern Transfer in Fabrication of GFET for Biosensing Applications

摘要

This work presents optimized pattern transfer technique for fabrication of GFET by using a conventional microfabrication technique. Although there are many advanced methods are available to produce nanostructures such as ion-beam lithography (IBL), electron beam lithography (EBL), nano-imprint lithography and focused ion beam milling, these techniques often requires high maintenance costs, time and very complicated processes compared to conventional photolithography. This conventional technique is good option to pattern feature size more than 1 micron. In this work, microgap design from chrome mask are transferred on silicon wafer via conventional photolithography. The final stage of fabrication which is developing technique is optimized to the pattern the desired dimension of electrodes. Therefore, developing time is carefully monitored; drawbacks and optimized techniques are reported in this work.