Analytical Model for the Threshold Voltage of a Double Gate Tunneling MOSFET Including the Source/Drain Depletion Regions

摘要

In this paper an analytical model for the threshold voltage of a double gate tunneling MOSFET has been presented. The threshold voltage is defined as the gate voltage at which the tunneling barrier width from the valence band of the source region to the conduction band of the channel region starts to saturate. The tunneling barrier width depends on the depletion width at the source/channel junction which in turn depends on the channel surface potential. The surface potential is affected by the source/drain depletion regions. Therefore, these depletion regions are included in the modeling. Finally, an analytical expression for the threshold voltage has been introduced which shows good match with the simulation results.