Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

摘要

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used to evaluate key degradation mechanisms. The forward voltage drop of the body diode is used as a thermo-sensitive electrical parameter to estimate the junction temperature and the thermal structure function is analysed to elucidate the degradation in the heat flow path inside the module. Comparisons are made with commercial Si IGBT power modules.