Simulation The Content Of Indium Of GaN-based LEDs On Patterned Substrate

摘要

The GaN-based LEDs have been epitaxial growth on the patterned sapphire substrate by LP-MOCVD. The structure and characters of the samples are analyzed by high-resolution double crystal X-ray diffraction (DCXRD) and photoluminescence (PL). It can be concluded that the crystalline quality of InGaN/GaN multiple quantum wells (MQWs) is preferable, the interface of MQWs is flat, and the yellow luminescence is nearly invisible. Meanwhile, The well thickness, barrier thickness and the content of Indium in the multiple quantum wells are simulated, and the result is consistent with the designed.