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Work function modulation of monolayer MOS2 doped with 3d transition metals

机译:掺杂3d过渡金属的单层MOS2的功函数调制

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Ever since the discovery of graphene, two-dimensional materials are promising to semiconductor industry. Monolayer molybdenum disulfide (MoS) especially stands as a prospective candidate due to its stability in ambient environment; whereas, the direct bandgap makes it potential in electro-optical applications. Work function plays an important parameter for light-emitting diode and contact electrification [1-2]. Some studies [3-4] revealed magnetic properties of MoS by doping 3d transition metals, but the dependence of work function on adatoms remains vague. Under density functional theory (DFT) framework, the Perdew-Burke-Ernzerhof (PBE) exchange-correction functional is applied in Vienna ab initio Simulation Package (VASP). The cutoff kinetic-energy for the valence electron is 500 eV, where the convergence condition for the force acting on each atom is less than 0.01 eVÅ and the energy difference is <; 10 eV/cell. A 4×4 MoS supercell is modeled to simulate the adatom-MoS system, after the unit cell of MoS reaches equilibrium structure. The corresponding bandstructure and density of states are shown in Fig. 1, where the extracted bandgap of 1.71 eV agrees with the experiment [5]. For the supercell, the Brillouin zone for structural optimization is sampled using 2×2×1 k-points by Monkhorst-Pack algorithm. The vacuum space of 15 Å is maintained to avoid the interaction from another layer of MoS. The dipole correction on the z-direction is considered for the electrostatic potential away from the surface and total energy.
机译:自从发现石墨烯以来,二维材料在半导体工业中就很有前途。单层二硫化钼(MoS)由于其在周围环境中的稳定性而特别有望用作候选材料。相反,直接带隙使其在电光应用中具有潜力。功函数对于发光二极管和触点带电起着重要的作用[1-2]。一些研究[3-4]通过掺杂3d过渡金属揭示了MoS的磁性,但是功函数对原子的依赖性仍然不明确。在密度泛函理论(DFT)框架下,将Perdew-Burke-Ernzerhof(PBE)交换校正函数应用于维也纳从头模拟程序包(VASP)。价电子的截止动能为500 eV,其中作用在每个原子上的力的会聚条件小于0.01eVÅ,并且能量差为<; 10 eV /单元。在MoS的晶胞达到平衡结构后,对4×4 MoS超级电池进行建模以模拟adatom-MoS系统。相应的能带结构和状态密度如图1所示,其中1.71 eV的带隙提取与实验一致[5]。对于超级电池,通过Monkhorst-Pack算法使用2×2×1 k点对用于结构优化的布里渊区进行采样。保持15Å的真空空间,以避免来自另一层MoS的相互作用。对于远离表面的静电势和总能量,可以考虑在z方向上进行偶极校正。

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