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Vertical fin Ga2O3 power field-effect transistors with on/off ratio >10

机译：开/关比> 10的垂直鳍式Ga2O3功率场效应晶体管

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摘要

Vertical FinFET topology is an attractive option to realize Ga2O3 power switches due to the lack of p-type Ga2O3. Here we demonstrate promising results for the first time.

机译：由于缺少p型Ga2O3，垂直FinFET拓扑是实现Ga2O3功率开关的一种有吸引力的选择。在这里，我们首次展示了令人鼓舞的结果。

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《Annual Device Research Conference》|2017年|1-2|共2页
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Zongyang Hu; Kazuki Nomoto; Wenshen Li; Liheng Jerry Zhang; Jae-Ho Shin; Nicholas Tanen; Tohru Nakamura; Debdeep Jena; Huili Grace Xing;
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Logic gates; Substrates; Doping; FinFETs; Electric breakdown; Nanoscale devices; Power transistors;

机译：逻辑门;基板;掺杂; FinFET;电击穿;纳米器件;功率晶体管;

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1. A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal-Oxide-Semiconductor Field-Effect Transistors and Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa, Japanese journal of applied physics . 2009,第5issue2期

机译：氮流量比与溅射氮化钛栅体平面金属氧化物半导体场效应晶体管和鳍型金属氧化物半导体场效应晶体管电学特性的比较研究
2. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors [J] . Mantu K. Hudait, Michael Clavel, Patrick Goley, Scientific reports. . 2014,第1期

机译：AlAs / GaAs缓冲架构在Si上外延Ge的异质集成：适用于低功率鳍式场效应晶体管
3. Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel [J] . Strempel Klaas, Roemer Friedhard, Yu Feng, Semiconductor science and technology . 2021,第1期

机译：基于翅片结构的垂直3D氮化镓场效应晶体管，倒置P掺杂通道
4. Vertical fin Ga2O3 power field-effect transistors with on/off ratio >10 [C] . Zongyang Hu, Kazuki Nomoto, Wenshen Li, Annual Device Research Conference . 2017

机译：垂直鳍GA2O3电源场效应晶体管，开/关比> 10
5. Design and fabrication of a high-voltage normally-off planar 4H-silicon carbide vertical junction field-effect transistor. [D] . Fursin, Leonid. 2005

机译：高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
6. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors [O] . Mantu K. Hudait, Michael Clavel, Patrick Goley, -1

机译：AlAs / GaAs缓冲架构在Si上外延Ge的异质集成：适用于低功率鳍式场效应晶体管
7. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors [O] . Mantu K. Hudait, Michael Clavel, Patrick Goley, 2014

机译：使用ALAS / GAAS缓冲架构的外延Ge对Si的异构集成：低功耗鳍场效应晶体管适用性

Vertical fin Ga2O3 power field-effect transistors with on/off ratio >10

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