Integration of InGaAs/InP structure above ROIC-CMOS for SWIR imaging

摘要

Nowadays short wavelength infrared (SWIR) imaging based on InP/InGaAs photo-diodes is quite popular for uncooled camera. The state of the art technology is a double layer planar heterointerface focal plane array [1]. But, it remains expensive and only used for defense and scientific applications. Its cost comes essentially from the individually hybridization of photo-diodes array with read-out circuit, by the mean of an indium-bumps flip-chip process. We suggest an alternative method for hybridization, in order to lowering the cost and providing a sustainable process to decrease the pixel pitch, and also increase the possible format. It consists in a direct integration of InP/InGaAs/InP structure above a finished read-out circuit (with CMOS technology) and circular diode architecture.