Effective n-type doping of monolayer MoS2 by AlOx

摘要

Doping of two-dimensional (2D) semiconductors often utilizes charge transfer techniques that are not compatible with standard CMOS fabrication and are unstable over time. Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (I/I) of a device. Here, we demonstrate that AlO can n-dope monolayer (1L) MoS while preserving I/I and S. The AlO doping significantly reduces the contact resistance (to 480 Ω·μm) while preserving the mobility (~34 cmVs) and S, ultimately achieving record on-current of 700 μA/μm for a monolayer semiconductor. We also present a model for the effect of interface traps on the transfer characteristics, which explains the experimentally obtained results.