Design considerations for the source region of Schottky-barrier source-gated transistors

摘要

Source gated transistors (SGTs) are field effect devices with operating characteristics desirable for both analog and digital operation. Unlike in conventional transistors, the length of the source electrode, S, may play an important role in the behavior of SGTs. Optimizing the source region geometry according to mode of operation (dominant mechanism of current injection) leads to larger saturated current, increased switching speed, or higher gain.