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Reduction of wafer arcing during high aspect ratio etching

机译:在高深宽比蚀刻过程中减少晶圆电弧

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We present several efforts for arcing reduction during high aspect ratio etching. Strategies including pulsing etching adjustments, ex situ multi-cyclic etch approach, flush step incorporation, E-chuck voltage operation, cap material, etc. are explored. The details are discussed in the paper.
机译:我们提出了一些在高深宽比蚀刻过程中减少电弧的方法。探索了包括脉冲蚀刻调整,非原位多循环蚀刻方法,冲洗步骤合并,电子卡盘电压操作,盖材料等在内的策略。在本文中讨论了详细信息。

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