Preparation of SiO2 nanowires by using carbon as reducing agent

摘要

SiO nanowires structures have been grown by a simple thermal evaporation method using C and SiO as the source materials at a relatively low. The as-synthesized products were characterized by scanning electron microscopy, electron energy-dispersive X-ray (EDX), X-ray powder diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). The products characterization indicated that the SiO nanowires with diameters ranging from 60nm to 120nm with a hexagonal strcture, with the length up to a few centimeters. The photoluminescence spectra of the grown products indicate excellent optical properties for the as-grown SiO nanowires.