A silicon based multi-tens MHz gate driver IC for GaN power devices

摘要

This paper describes electrical characteristics of a silicon based multi-tens MHz gate driver IC for GaN power devices. The fabricated gate driver IC can operate 50 MHz and drive the GaN power device when sine wave inputs. We fabricated prototype synchronous back converter using GaN power devices and the fabricated driver IC. The fabricated buck converter can operate at 30 MHz and results show that the most important challenge for high frequency POL is to reduce parasitic impedance. The simulation results show that a 3D stacked power supply on chip effectively reduces the parasitic impedance and improves the efficiency.