Ultrafine intrinsic FET with nanodot type floating gate

摘要

The channel length of the next generation semiconductor device is 10 nm or less. In general, a pn junction is necessary for FETs, but it is difficult to make the p-n junction to 10 nm or less depending on the concentration gradient relationship. Further, variations in the impurity concentration between the devices cause a problem. For this reason, FETs using intrinsic semiconductors for the channel have been studied. In this study, we investigated the electrical characteristics of n-i-n, p-i-p type FET with channel less than 10 nm by accumulating electric charge in nanoparticles (NP). For a transistor with a channel length of 10 nm or less, a V-groove type FET was used. In addition, NPs were placed at the bottom of the V-groove using a Bio Nano Process (BNP). The protein used is a cage shaped protein called ferritin, which can convert various inorganic materials into nanoparticles. NPs act as a boating gate for this device. Memory operation was confirmed with devices with NPs. We observed that the threshold voltage of the device varied due to the work function of the nanoparticles. This device with well controlled nanostructures is believed to reveal further electronic properties in the region below 10 nm.