Design and manufacture of field-effect transistor based on reduced graphene oxide (RGO-FETs)

摘要

Field-effect transistors with graphene (GFETs) as the conducting channels are under investigation as promising chemical and biological sensors. In order for graphene to fulfill this promise and become a material for the large-scale manufacture of high-performance electronics, large-area, high-quality graphene on substrates amenable to electrical device operation and sensors fabrication is needed. So the purpose of this paper is to provide in detail how reduced graphene oxide suspension (100 μg RGO/ 1ml NMP) was developed, and functionalized the back gate FETs. Following an introduction, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films ranging from a single monolayer to several layers in thicknesses between the electrodes in FET. The Raman spectrum of graphene consists of a number of peaks which are well characterized and understood. Electrical transfer property tests revealed that both of the two FETs exhibit V-shaped ambipolar field effect behavior from p-type region to n-type region. This research investigared the preparation of back gate field effect transistor with reduced graphene oxide via a low-cost manufacturing method. The reasults suggest that our method is fast, facile, and substrate independent.