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Bayesian Modeling of COTS Power MOSFET Ionizing Dose Impact on Circuit Response

机译:COTS功率MOSFET电离剂量对电路响应的贝叶斯建模

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摘要

Threshold voltage variation with ionizing dose was measured for a commercial power MOSFET. Variation of radiation response was captured using a Bayesian linear model, which enabled a Monte Carlo simulation of variation in circuit performance.
机译:对于商用功率MOSFET,测量了阈值电压随电离剂量的变化。使用贝叶斯线性模型捕获辐射响应的变化,该模型启用了电路性能变化的蒙特卡洛模拟。

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